The process of selective control of the life of the electrons and holes in the transistors

摘要

954,854. Transistors. FAIRCHILD CAMERA & INSTRUMENT CORPORATION. May 4, 1960 [June 30, 1959], No. 15712/60. Heading H1K. A silicon NPN transistor body has a limited amount of gold diffused throughout the body so that the carrier lifetime in the collector region is reduced without affecting the lifetime in the base region. In one example a thin (1 Á) gold layer is provided on the collector side of an NPN silicon transistor body and heated for 30 minutes at 980‹ C. to diffuse the gold into the body; the body may then be maintained at a temperature of 300 ‹ C. for annealing treatment.