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摘要

A method for manufacturing a semiconductor device provided with a substrate made of semiconductor material characterized in that: it produces at least two portions of insulator layer spaced on a surface of a semiconductor substrate, said layer portions containing impurities of a conductivity type of said substrate, producing a region reacted in said substrate between said portions of insulator layer, said reacted region including a layer of converted substrate material and a channel of low resistivity between the bulk of the volume of said body and said layer of converted substrate material, causing said impurities to diffuse from said portions of layers within said substrate forming contiguous low resistivity diffused regions and defining the ends of said channel, then producing an electrode on said layer of converted substrate material which is opposite and spaced from said channel. (Machine-translation by Google Translate, not legally binding)