The process in order to be grown on the single crystals of monocrystalline layers doped homogeneously

摘要

PICT:1035810/C6-C7/1 A layer of semi-conductor material, e.g. silicon or germanium, uniformly doped with boron is deposited in a monocrystalline layer by dissolving decarborane (B10H14) in a liquid compound of the semi-conductor material, e.g. silicochloroform or silicon tetrachloride, vapourizing the solution, and decomposing the vapour by heat. As shown in Fig. 2, a solution of decaborane in silicochloroform in a vessel 22 has a carrier gas e.g. hydrogen fed into it through a pipe 24, and the vapour mixture is fed to a water cooled quartz reaction chamber containing a silicon base 8 heated by tungsten electrodes 7, 9. In a modification (Fig. 3, not shown) the layer is deposited on silicon discs heated by induction coils. Alternatively the reaction chamber may be made of silicon and surrounded with a quartz housing.ALSO:PICT:1035810/C1/1 A layer of silicon uniformly doped with boron is deposited on a monocrystalline layer of silicon by dissolving decaborane (B10H14) in a liquid compound of silicon, e.g. silicochloroform or silicon tetrachloride, vaporising the solution, and decomposing the vapour by heat. As shown in Fig. 2, a solution of decaborane in silicochloroform in a vessel 22 has a carrier gas, e.g. hydrogen, fed into it through a pipe 24, and the vapour mixture is fed to a water-cooled quartz reaction chamber containing a silicon base 8 heated by tungsten electrodes 7, 9. In a modification (Fig. 3, not shown) the layer is deposited on silicon discs heated by induction coils. Alternatively, the reaction chamber may be made of silicon and surrounded with a quartz housing.