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Silver and copper halide doped bi2te3-as2se3 thermoelectric material

机译:卤化银和铜掺杂的bi2te3-as2se3热电材料

摘要

A semi-conducting alloy consists of a solid solution of Bi2Te3 and As2Se3 and a doping additive in a quantity sufficient to enhance the n-conducting properties of the basic material, the additive being a halide of a Group Ib metal. Examples of good additives are copper bromide and silver iodide, respectively used in quantities of 0.05-0.07 wt. per cent and about 0.1 wt. per cent of the composition. In the preferred materials the mol. ratio of Bi2Te3 to As2Se3 is between 7 : 3 and 9 : 1. Two examples are outlined. In one, the four main elements are fused together with copper bromide in an evacuated quartz tube and lowered slowly through a furnace at 600 DEG C. to eventually form a polycrystalline rod. In the second example the main elements are fused with silver iodide in an evacuated quartz tube within which the material is subsequently reverse-pass zone refined.
机译:半导体合金由Bi2Te3和As2Se3的固溶体以及足以增强基础材料的n导电性能的掺杂添加剂组成,该添加剂为Ib族金属的卤化物。良好添加剂的例子是溴化铜和碘化银,其用量分别为0.05-0.07 wt。%。百分比和约0.1 wt。构成的百分比。在优选的材料中,摩尔。 Bi 2 Te 3与As 2 Se 3的比率在7∶3至9∶1之间。在一种方法中,将四个主要元素与溴化铜在真空石英管中熔合在一起,并通过600℃的炉子缓慢降低,最终形成多晶棒。在第二个例子中,主要元素与碘化银在真空石英管中熔合,随后在石英管中对材料进行反向通过区精制。

著录项

  • 公开/公告号US3258427A

    专利类型

  • 公开/公告日1966-06-28

    原文格式PDF

  • 申请/专利权人 SIEMENS-SCHUCKERTWERKE AKTIENGESELLSCHAFT;

    申请/专利号US19620231858

  • 发明设计人 RUPPRECHT JOACHIM;

    申请日1962-10-19

  • 分类号H01L35/16;

  • 国家 US

  • 入库时间 2022-08-23 14:34:09

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