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Process for the production of layers of the two-component superconducting intermetallic compounds vanadium-gallium or niobium-gallium

机译:两组分超导金属间化合物钒镓或铌镓层的生产方法

摘要

A V3Ga or Nb3Ga superconducting intermetallic compound is produced on a support of V or Nb by bringing a gaseous Ga alkyl compound into contact with the support and heating it to the decomposition temperature, e.g. 200-500 DEG C. for 1/2 -1 minute under a vacuum of 1-10-2mm Hg, to deposit a Ga layer, and then heating the support e.g. for 1 to 10 minutes under vacuum or in a protective gas e.g. A or He to diffuse the Ga into the support and react therewith. The heating may be effected at 900-1200 DEG C. for V and 1200-1500 DEG C. for Nb. The alkyl compound may be Ga triethyl, triisobutyl, tri-n-hexyl or Ga diethyl hydride. The support may be in the form of wire, ribbon, plate or cylinder, and may be heated inside a quartz reaction tube by resistance, radiation or induction heating.ALSO:A V3Ga or Nb3Ga superconducting intermetallic compound is produced on a support of V or Nb by bringing a gaseous Ga alkyl compound into contact with the support and heating it to the decomposition temperature, e.g. 200-500 DEG C. for 1/2 -1 minute under a vacuum of 1-10-2 mm. Hg, to deposit a Ga layer, and then heating the support, e.g. for 1 to 10 minutes under vacuum or in a protective gas, e.g. A or He to diffuse the Ga into the support and react therewith. The heating may be effected at 900-1200 DEG C. for V and 1200-1500 DEG C. for Nb. The alkyl compound may be Ga triethyl, triisobutyl, tri-n-hexyl or Ga diethyl hydride. The support may be in the form of wire, ribbon, plate or cylinder, and may be heated inside a quartz reaction tube by resistance, radiation or induction heating.
机译:V 3 Ga或Nb 3 Ga超导金属间化合物是通过使气态的Ga烷基化合物与载体接触并加热至分解温度,例如在V或Nb的载体上而生成的。在1-10-2mm Hg的真空下于200-500℃干燥1/2 -1分钟,以沉积Ga层,然后加热载体,例如在真空或保护性气体(例如A或He将Ga扩散到载体中并与其反应。对于V,加热可以在900-1200℃下进行,对于Nb,可以在1200-1500℃下进行加热。烷基化合物可以是Ga三乙基,三异丁基,三正己基或Ga二乙基氢化物。载体可以是线,带,板或圆柱体的形式,并且可以通过电阻,辐射或感应加热在石英反应管内加热。ALSO:在V或V的载体上生成V3Ga或Nb3Ga超导金属间化合物。通过使气态的Ga烷基化合物与载体接触并将其加热至分解温度(例如:在1-10-2 mm的真空下于200-500℃干燥1/2 -1分钟。 Hg,以沉积Ga层,然后加热载体,例如在真空或保护性气体(例如A或He将Ga扩散到载体中并与其反应。对于V,加热可以在900-1200℃下进行,对于Nb,可以在1200-1500℃下进行加热。烷基化合物可以是Ga三乙基,三异丁基,三正己基或Ga二乙基氢化物。支撑物可以是线,带,板或圆柱体的形式,并且可以通过电阻,辐射或感应加热在石英反应管内加热。

著录项

  • 公开/公告号GB1085050A

    专利类型

  • 公开/公告日1967-09-27

    原文格式PDF

  • 申请/专利权人 SIEMENS-SCHUCKERTWERKE AKTIENGESELLSCHAFT;

    申请/专利号GB19660037599

  • 发明设计人

    申请日1966-08-22

  • 分类号C23C10/28;H01L39/00;H01L39/24;

  • 国家 GB

  • 入库时间 2022-08-23 13:52:13

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