首页> 外国专利> ELECTROLUMINESCENT DEVICE FOR DERIVING A BRIGHT OUTPUT IMAGE FROM A DARK INPUT IMAGE

ELECTROLUMINESCENT DEVICE FOR DERIVING A BRIGHT OUTPUT IMAGE FROM A DARK INPUT IMAGE

机译:用于从暗输入图像导出明亮输出图像的电致发光设备

摘要

1,169,718. Electroluminescence. MATSUSHITA ELECTRIC INDUSTRIAL CO. Ltd. 24 Oct., 1966 [25 Oct., 1965; 8 June, 1966], No. 47646/66. Heading C4S. An electroluminescent device comprises glass base 1, electroluminescent layer 4, electrode pairs 2SP1/SP, 2SP11/SP, non-linear impedance layer 5 (e.g. a non-linear ferroelectric capacitance layer), A.C. source 3 for applying an A.C. field across layer 4 by means of the A.C. flow in the non-linear impedance layer in the lateral direction thereof, and means, including for instance opaque resistance layer 6, photo-conductive elements 7 with electrode pairs 8SP1/SP, 8SP11/SP and D.C. source 9, for applying a D.C. field to non-linear impedance layer 5 to control its impedance in the lateral direction thereof. In Fig. 3 (not shown), resistance layer 6 is excluded and a non-linear resistance layer (10) in the form of a semiconducting thin film (eg, a SiC varistor or CdS) replaces the ferro-electric layer and a positive rather than negative image is produced. In Fig. 1 (not shown), photo-conductive elements 7 and electrodes 8SP1/SP, 8SP11/SP are single layers. The phosphors may be ZnS: Cu, Al in a binder; the photo-conductive layers CdS: Cu, Cl in a binder of high specific resistance such as epoxy resin; the ferro-electrics may be BaTiO 3 or (Pb, Zn) TiO 3 ceramics, electrodes 2SP1/SP, 2SP11/SP of stannic oxide and electrodes 8SP1/SP, 8SP11/SP of Al, conductive paint or stannic oxide. Phosphor layer 4 may be 30 microns thick; thicknesses of the other layers and electrode widths and separations are also disclosed.
机译:1,169,718。电致发光。松下电工产业株式会社,1966年10月24日[1965年10月25日; 1966年6月8日],第47646/66号。标题C4S。电致发光器件包括玻璃基体1,电致发光层4,电极对2 1 ,2 11 ,非线性阻抗层5(例如,非线性铁电电容层)交流电源3,其通过在非线性阻抗层中沿其横向方向的交流电在层4上施加交流电场,以及包括例如不透明电阻层6,带有电极对的光电导元件7的装置8 1 ,8 11 和DC电源9,用于向非线性阻抗层5施加DC场以控制其横向方向上的阻抗。在图3(未示出)中,排除了电阻层6,并且以半导体薄膜(例如,SiC压敏电阻或CdS)形式的非线性电阻层(10)代替了铁电层,而正极而不是产生负像。在图1(未示出)中,光电导元件7和电极8 1,,8 11 是单层的。磷光体可以是粘合剂中的ZnS:Cu,Al;或磷光体。在高电阻率的粘合剂如环氧树脂中的光电导层CdS:Cu,Cl;铁电材料可以是BaTiO 3或(Pb,Zn)TiO 3陶瓷,氧化锡的电极2 1 ,2 11 和电极8 1 ,8 11 的铝,导电涂料或氧化锡。荧光体层4可以是30微米厚;还公开了其他层的厚度以及电极宽度和间隔。

著录项

  • 公开/公告号US3465202A

    专利类型

  • 公开/公告日1969-09-02

    原文格式PDF

  • 申请/专利权人 MATSUSHITA DENKI SANGYO KK.;

    申请/专利号USD3465202

  • 发明设计人 TADAO KOHASHI;

    申请日1966-10-17

  • 分类号H05B37/02;H05B39/04;H05B41/14;

  • 国家 US

  • 入库时间 2022-08-23 11:39:14

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