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process for the manufacture of electric lamps digit with a photocathode, which providing a strong p - senior a? b? - link

机译:光电阴极数字电灯的制造方法,该方法可提供强大的p-高级a? ?? -链接

摘要

1,207,091. Cathode materials and processing. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. 17 March, 1969 [15 March, 1968], No. 13772/69. Heading H1D. A method of manufacturing an electronic discharge tube including a photo-cathode, the active constituent of which comprises a strongly p-conductive A III -B V -compound, where A III is B, Al, Ga or In, and B v is N, P, As or Sb, which is activated by an alkali or alkaline earth metal, includes the steps of heating the un-activated compound in the tube to a temperature not exceeding 300‹ C. for at least two hours and then, before activation, bombarding a free surface of the compound with rare gas ions having an energy not exceeding 100 eV. Preferably the energy of the rare gas ions is halved for the final part of the treatment. As shown, the photo-cathode 4 of the tube is a monocrystalline. GaAs plate with its surface oriented in the (110) direction and coated with an epitaxially deposited GaAs layer 5, 10 microns thick, which is doped with 3 x 10SP19/SP atoms of zinc/c.c. After degreasing all electrodes in the tube by heating in chlorothene at 60‹ C. for 2 min., the tube is exhausted and heated at 275‹ C. for 4 hours. Pure argon is then admitted at 5 x 10SP-4/SP Torr and a glow discharge ignited between electrodes 7 and 8, and with the cathode held 100 v. negative with respect to electrode 7 an ion current of 30ÁA/sq. cm. is drawn to the cathode surface for 30 min. The voltage is then reduced to 50 volts and ion current drawn for another 15 min. After pumping away the argon, the photo-cathode may be activated by successive additions of caesium, from source 9, and oxygen as described in Specification 1,200,899.
机译:1,207,091。阴极材料及加工。飞利浦电子及相关工业有限公司1969年3月17日[1968年3月15日],第13772/69号。标题H1D。一种制造包括光阴极的电子放电管的方法,其活性成分包括强p导电的A III -BV-化合物,其中A III是B,Al,Ga或In,B v是N由碱金属或碱土金属活化的P,As或Sb包括以下步骤:将管中未活化的化合物加热到不超过300℃的温度至少两个小时,然后在活化之前,用能量不超过100 eV的稀有气体离子轰击化合物的自由表面。优选地,在处理的最后部分将稀有气体离子的能量减半。如图所示,管的光阴极4是单晶的。 GaAs板的表面朝向(110)方向,并涂有外延沉积的GaAs层5(厚度为10微米),该层掺杂有3 x 10 19 锌/c.c原子。通过在60℃的氯乙烯中加热2分钟使管中的所有电极脱脂后,将管抽空并在275℃加热4小时。然后在5 x 10 -4 托下接纳纯氩气,并在电极7和8之间点燃辉光放电,并且阴极相对于电极7保持100v负离子电流为30ÁA/平方厘米。将其拉到阴极表面30分钟。然后将电压降低到50伏,再吸取离子电流15分钟。在抽出氩气之后,可以通过依次添加来自源9的铯和氧气来激活光电阴极,如规格1,200,899中所述。

著录项

  • 公开/公告号FR2004044A1

    专利类型

  • 公开/公告日1969-11-14

    原文格式PDF

  • 申请/专利权人 PHILIPS GLOEILAMPEN;

    申请/专利号FR19690007598

  • 发明设计人

    申请日1969-03-17

  • 分类号H01J9/00;

  • 国家 FR

  • 入库时间 2022-08-23 10:40:16

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