DISLOCATION ENHANCEMENT CONTROL OF SILICON BY INTRODUCTION OF LARGE DIAMETER ATOMIC METALS

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  机译： 具有在硅衬底和单晶氧化物层之间的界面处具有碱土金属金属，氧和硅的单原子层的半导体结构的制造方法

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  机译： 无位错单晶硅的制造方法及无位错单晶硅锭

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  机译： 用于非单晶硅单晶生长的种子晶体及制造非单晶硅单晶的方法

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