manufacturing process of a semiconductor particle detector without dead zone pid structure and the process obtenusselon detectors

摘要

1320834 Radiation detectors COMMISSARIAT A L'ENERGIE ATOMIQUE 22 June 1971 [26 June 1970] 29261/71 Heading H1K A conventionally formed lithium-drifted radiation detector with compensated region 17 and p-type region 15 is processed by the abrasive removal of the face containing the n-type lithium diffused region 16 to provide a new face (in plane 21) the compensated area of which is thinly coated with a metal and then subjected to lithium ion implantation through the metal layer to provide a very thin n-type layer. Thermal annealing is not necessary after implantation in this fashion. The embodiment described uses silicon and the metal layer is of gold; this layer and a further gold layer on the opposite face of the body form the two ohmic contacts of the device. Germanium may instead be used. The detectors have virtually no dead space and are therefore suitable for use in stacked array.