首页> 外国专利> process for the production of isolated einkristalliner areas with low nebenschlusskapazitaet in halbleiterkoerper a mikrominiaturisierten schaltungsanordnung on festkoerperbasis

process for the production of isolated einkristalliner areas with low nebenschlusskapazitaet in halbleiterkoerper a mikrominiaturisierten schaltungsanordnung on festkoerperbasis

机译:半导体本体中具有低并联电容的隔离单晶区的生产方法,基于固体的超小型化电路装置

摘要

A solid state circuit arrangement having a semiconductor member and presenting reduced shunt capacitances as the result of the isolation of various regions of the member from each other and a method for fabricating such arrangement by forming a subassembly of two members, constituted by a first insulating layer and the semiconductor member, by depositing one of the members on the surface of the other thereof, depositing a second insulating layer on the side of the semiconductor member which is opposite from the surface upon which the first layer bears, forming apertures in at least one of the insulating layers to expose surface portions of the semiconductor member, and etching out the portions of the semiconductor member in the region of each aperture to create cavities which extend from one of the insulating layers to the other.
机译:一种固态电路装置,其具有半导体构件并且由于该构件的各个区域彼此隔离而呈现出减小的并联电容,以及通过形成由第一绝缘层构成的两个构件的子组件来制造这种装置的方法所述半导体构件,通过将所述构件之一沉积在另一构件的表面上,在与所述第一层所承载的表面相反的所述半导体构件的一侧上沉积第二绝缘层,从而在至少一个中形成孔绝缘层的一部分露出半导体构件的表面部分,并在每个孔的区域中蚀刻掉半导体构件的部分,以形成从绝缘层之一延伸到另一个的空腔。

著录项

  • 公开/公告号SE337871B

    专利类型

  • 公开/公告日1971-08-23

    原文格式PDF

  • 申请/专利权人 TELEFUNKEN PAT;

    申请/专利号SE19650010106

  • 发明设计人 SCHUETZE H;HENNINGS K;

    申请日1965-08-02

  • 分类号H01L19/00;

  • 国家 SE

  • 入库时间 2022-08-23 10:11:39

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