METHOD OF AND APPARATUS FOR INDICATING SEMICONDUCTOR ISLAND THICKNESS AND FOR INCREASING ISOLATION AND DECREASING CAPACITY BETWEEN ISLANDS

• 1. 海上浮式岛屿、海上浮式岛屿群及海上浮式岛屿构建方法 [P] . 中国专利： CN112278173A . 2021-01-29
• 2. 海上浮式岛屿、海上浮式岛屿群及海上浮式岛屿的构建方法 [P] . 中国专利： CN110395364A . 2019-11-01
• 3. METHOD OF AND APPARATUS FOR INDICATING SEMICONDUCTOR ISLAND THICKNESS AND FOR INCREASING ISOLATION AND DECREASING CAPACITY BETWEEN ISLANDS [P] . 德国专利： DE000002050474A . 1971-04-22

  机译： 指示半导体岛屿厚度并增加岛屿之间的隔离和减少容量的方法和装置

• 4. METHOD OF AND APPARATUS FOR INDICATING SEMICONDUCTOR ISLAND THICKNESS AND FOR INCREASING ISOLATION AND DECREASING CAPACITY BETWEEN ISLANDS [P] . 美国专利： US3624463A . 1971-11-30

  机译： 指示半导体岛屿厚度并增加岛屿之间的隔离和减少容量的方法和装置

• 5. Thin film transistor with an insulating film having an increased thickness on a periphery of a semiconductor island [P] . 美国专利： US5757030A . 1998-05-26

  机译： 在半导体岛的外围具有厚度增加的绝缘膜的薄膜晶体管

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