method and device for the precipitation of layers, which differ in composition differences, on a substrate, voortbrengsels,bevattendedergelijke successive layers and electronic devices, in particular halfgeleiderinrichtingen comprising such voortbrengsels

摘要

1387023 Gallium arsenide PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 12 April 1972 [15 April 1971] 16839/72 Heading C1A [Also in Division C7] Different layers are deposited on a substrate 6 to form, e.g. a semi-conductor device by deposition from a gaseous phase in a reaction vessel 1. The substrate is moved manually or mechanically to a container 10 where, e.g. gallium arsenide, using AsCl 3 which is passed over a mass 11 of Ga is deposited, and to orifices 13, 15 where layers of doping materials, e.g. S or Zn in a carrier gas, e.g. hydrogen, are deposited. The reaction vessel is placed in a furnace arranged to provide different temperatures in different parts of the vessel.