Semiconductor body - consisting of surface oxidised semiconducting alloy eg silicon-germanium without doping material

摘要

Semiconductor body consisting of a semiconducting alloy of different oxidisable elements without doping materials has (a) a cover layer consisting of the oxide of a component of the alloy, (b) a boundary transition between the oxide and the body, and (c) a boundary layer with an increasing concn. of the element which is difficult to oxidise next to the transition. Semiconductor bodies with controlled surface, boundary face, lower surface and oxide properties are formed. The pdts. have a better performance than known system e.g. Si and SiGe. A wide variety to devices can be produced e.g. transistors, capacitors and integrated circuits.