Epitaxial gallium aluminium arsenide layer - from liquid phase soln of aluminium arsenide in gallium

摘要

Ternary cpds. of elements from gps. III and V are deposited epitaxially by (a) forming a soln. in the liquid phase in an excess of one of the components contg. an amount of a binary III-V cpd. in the solid state with at least one component other than the solvent, (b) placing a substrate and the soln. in an epitaxial growth direction, (c) adjusting to a temp. lower than the m.p. of the substrate, (d) contacting the substrate with the soln. and (e) subjecting to programmed cooling. The process is used in the prodn. of electroluminescent diodes.