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CAMERA TUBE TARGET WITH PROJECTING P-TYPE REGIONS SEPARATED BY GROOVES COVERED WITH SILICON OXIDE LAYER APPROXIMATELY ONE-SEVENTH GROOVE DEPTH
CAMERA TUBE TARGET WITH PROJECTING P-TYPE REGIONS SEPARATED BY GROOVES COVERED WITH SILICON OXIDE LAYER APPROXIMATELY ONE-SEVENTH GROOVE DEPTH
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机译:投射有P型区域的相机管目标,该区域由覆盖有氧化硅层的沟槽隔离的沟槽深度约为七分之一
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摘要
The invention relates to a tube for picking up images and in particular to a radiation-sensitive target plate present therein of a semiconductor material and to the manufacture of such a target plate. The semiconductor plate comprises a substrate on which a mosaic of regions is present, which are separated from each other by grooves, and which each form a rectifying junction with the substrate.
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