METHOD OF MAKING A HIGH FREQUENCY LIGHT EMITTING GaAs {11 {118 {11 P {11 {0 (0{21 X{21 0.6) DIODE

摘要

A method of making a high efficiency light emitting GaAs1-xPx (0x0.6) diode, wherein Zn is diffused as acceptor into an n-type crystal by using a diffusion source, whose composition lies, in a Ga-P-Zn phase diagram, in a triangular region, the three apices of which are Zn3P2, GaP and the point where the content in P is lowest in the region having a higher content in P among two liquid phase regions; a window through which light generated at a p-n junction formed therein can emerge from the crystal with high external quantum efficiency is thereby formed by an enrichment in P at the same time as the surface layer of an n-type GaAs1-xPx (0x0.6) crystal is converted into a p-type layer.