A method for reducing the switch-off time of a thyristor

摘要

The switching speed of a thyristor is increased while maintaining low gate current (Ig) by irradiating with a radiation source. The thyristor is irradiated preferably with electron radiation of an intensity greater than 1 Mev and most desirably 2 Mev preferably to an electron dosage of from between 1 x 1013 and 2 x 1014 electrons/cm2.