Epitaxial growth of ternary cpd - by isothermal crystallisation, with control over proportions of components in final prod

摘要

Thin layer of (A1-xBx)C is grown on a substrate by liquid phase growth from a soln. contg. at least A and B at a temp. below the m.pt. of the cpd. whereby an appreciable vol. of soln. contacts the upper surface of the substrate and the lower surface of a source of C. The interface with the substrate is kept at a constant growth temp. and the source of C at a const. temp. interval below the temp. of this interface. Rates of diffusion of all components to the substrate produce the desired value of x consistently rather than variably as in prior art. Pref. A is Ga, B is Al and C is As.