Soln for producing oxide film for doping semiconductors - in solid state contains reaction product of tetraethyl ortho silicate and acetic acid/anhydride, for reproduced-ucibility

摘要

A mixt. of substances, present in a soln. (I) contg. a dopant (II), which can be diffused into a semiconductor in the solid state, also contains a reaction prod. (III) of Et4SiO4 plus AcOH or Ac2O. This oxide-forming compsn. has satisfactory purity and keeping qualities and can be reproduced on the industrial scale to accurate specifications. The pref. components are: (I) EtOH; (II) a cpd. of B, P, As or Au (for a Si semiconductor) or Zn (for a GaAs semiconductor); (III) (EtO)2Si(OAc)2. Solid state diffusion is achieved by surrounding the semiconductor with the dopant source and heating to the diffusion temp.