Thyristor with long gate zone edge - reduces voltage rise-time without producing localised high-density currents

摘要

The thyristor has its gate zone edge made as long as possible compared to the zone area so that the voltage risetime can be reduced without producing localised high-density currents which might damage the thyristor. The gate zone may be star-shaped, or composed of separate sub-zones, or form a grid or strip arrangement, or be circular. The contact is smaller than the gate's area. The non-contact part of the gate is covered with an insulating layer, and this layer and the contact are then metallised. The insulating layer extends as far as the cathode's contact.