首页> 外国专利> Hot pressed silicon nitride containing finely dispersed silicon carbide or silicon aluminum oxynitride

Hot pressed silicon nitride containing finely dispersed silicon carbide or silicon aluminum oxynitride

机译:包含细分散的碳化硅或氮氧化硅铝的热压氮化硅

摘要

A hot-pressed silicon nitride product containing a finely dispersed silicon carbide mixture is described. The product has very high strength at room temperature as well as high strength at elevated temperature. It has a high density and its electrical conductivity can be controlled over several orders of magnitude. In preferred forms the electrical resistivity is on the order of 2-10 ohm centimeters and, accordingly, the product can be machined by electric discharge machining. Where high strength is desired the product can be made to have a transverse rupture strength in excess of 100,000 p.s.i. as measured by a four point test at room temperature and, at 1375 DEG C, the transverse rupture strength can be in excess of 40,000 p.s.i., as measured by a three point test. This high strength product is formed predominantly of an essentially continuous matrix of silicon nitride which, under a scanning electron microscope, appears to have an average crystal size less than 1 micron.
机译:描述了包含精细分散的碳化硅混合物的热压氮化硅产物。该产品在室温下具有很高的强度,在高温下也具有很高的强度。它具有高密度,其电导率可以控制在几个数量级。在优选形式中,电阻率在2-10欧姆厘米的数量级,因此,可以通过放电加工来加工产品。当需要高强度时,可以使产品的横向断裂强度超过100,000p.s.i。如在室温下于1375℃下通过四点试验所测得的,通过三点试验所测得的横向断裂强度可超过40,000p.s.i.。该高强度产物主要由氮化硅的基本连续的基质形成,该氮化硅的基质在扫描电子显微镜下似乎具有小于1微米的平均晶体尺寸。

著录项

  • 公开/公告号US3890250A

    专利类型

  • 公开/公告日1975-06-17

    原文格式PDF

  • 申请/专利权人 NORTON COMPANY;

    申请/专利号US19730392094

  • 发明设计人 RICHERSON;DAVID W.;

    申请日1973-08-27

  • 分类号H01B1/04;

  • 国家 US

  • 入库时间 2022-08-23 03:29:23

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