首页> 外国专利> READ-ONLY MEMORY ARRAYS IN WHICH A PORTION OF THE MEMORY-ADDRESSING CIRCUITRY IS INTEGRAL TO THE ARRAY

READ-ONLY MEMORY ARRAYS IN WHICH A PORTION OF THE MEMORY-ADDRESSING CIRCUITRY IS INTEGRAL TO THE ARRAY

机译:一部分内存寻址电路不可或缺的只读内存阵列

摘要

1302105 Read only memory; code conversions TELETYPE CORP 6 May 1970 [7 May 1969] 21771/70 Headings G4A and G4H A memory array (Figs. 1, 2) incorporating FETs has a memory section 18, an X address section 14 and a Y address section 17. A data address appears at inputs I 1 , I 2 , I 3 , I 4 , and is supplied to phase splitters 10, 11, 12, 13 supplying true and false signals to the pair of lines respectively coupled to the output of each splitter. The true and false signals are fed on column conductors to the control electrodes of selected transistors each having a further electrode connected to a row line and arranged so that each combination of bits in the inputs I 1 , I 2 or I 3 , I 4 leaves one row only in each address section not connected to an enabled transistor so that each X and Y binary address signal is converted to a 1 out of 4 signal. During readout a pulse # 2 enables transistors 31-34 and causes capacitors 36-39 to be charged. A pulse at # 3 enables transistors 21-24 and causes capacitors 26-29 to be charged. At the cessation of # 2 only one of capacitors 36-39 remains charged and at the cessation of # 3 only one of capacitors 26-29 remains charged unless the row to which the remaining charged capacitor is connected is coupled to the transistor enabled by the charged capacitor 36, 37, 38 or 39. Thus if the capacitor not discharged by the Y address is not coupled to an enabled transistor in the memory section 18 a "1" is read out at # 4 , otherwise a "0" is read out. In an alternative embodiment (Fig. 5, not shown) the Y address transistors are coupled between adjacent rows and a "1" voltage supply is coupled to the top row. The X address is arranged to enable one of the memory section transistors as described above, the memory address transistors being coupled between adjacent rows. The Y address enables the transistors to couple all pairs of adjacent rows but one. If the enabled memory transistor couples the pair of rows not coupled by the Y address the "1" voltage source charges an output capacitor connected to the lowest row and a "1" is read out, otherwise a "0" is read.
机译:1302105只读内存;代码转换TELETYPE CORP 1970年5月6日[1969年5月7日]标题G4A和G4H装有FET的存储器阵列(图1、2)具有存储器部分18,X地址部分14和Y地址部分17。数据地址出现在输入I 1,I 2,I 3,I 4处,并被提供给分相器10、11、12、13,分别将真信号和假信号提供给分别耦合到每个分相器输出的一对线路。正确信号和错误信号在列导体上馈送到所选晶体管的控制电极,每个晶体管的另一个电极连接到行线,并排列成使得输入I 1,I 2或I 3,I 4的位的每种组合离开仅在每个地址段中的一行未连接到启用的晶体管,因此每个X和Y二进制地址信号都将转换为4中的1。在读出期间,脉冲#2使能晶体管31-34并使电容器36-39充电。 #3处的脉冲使能晶体管21-24,并使电容器26-29充电。在#2停止时,只有电容器36-39中的一个保持充电,而在#3停止时,电容器26-29中的仅一个电容器保持充电,除非与剩余充电电容器相连的行耦合到由晶体管使能的晶体管。充电的电容器36、37、38或39充电。因此,如果未通过Y地址放电的电容器未耦合到存储部分18中的启用晶体管,则在#4处读出“ 1”,否则读出“ 0”出来。在替代实施例中(图5,未示出),Y地址晶体管耦合在相邻行之间,并且“ 1”电压源耦合到顶部行。 X地址被布置成启用如上所述的存储器部分晶体管之一,存储器地址晶体管耦合在相邻行之间。 Y地址使晶体管能够耦合所有成对的相邻行,但只有一对。如果使能的存储晶体管耦合未通过Y地址耦合的那对行,则“ 1”电压源对连接到最低行的输出电容器充电,并读出“ 1”,否则读出“ 0”。

著录项

  • 公开/公告号JPS5111901B1

    专利类型

  • 公开/公告日1976-04-14

    原文格式PDF

  • 申请/专利权人

    申请/专利号JP19700038352

  • 发明设计人

    申请日1970-05-07

  • 分类号G11C17/00;

  • 国家 JP

  • 入库时间 2022-08-23 03:16:14

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号