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READ-ONLY MEMORY ARRAYS IN WHICH A PORTION OF THE MEMORY-ADDRESSING CIRCUITRY IS INTEGRAL TO THE ARRAY
READ-ONLY MEMORY ARRAYS IN WHICH A PORTION OF THE MEMORY-ADDRESSING CIRCUITRY IS INTEGRAL TO THE ARRAY
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机译:一部分内存寻址电路不可或缺的只读内存阵列
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1302105 Read only memory; code conversions TELETYPE CORP 6 May 1970 [7 May 1969] 21771/70 Headings G4A and G4H A memory array (Figs. 1, 2) incorporating FETs has a memory section 18, an X address section 14 and a Y address section 17. A data address appears at inputs I 1 , I 2 , I 3 , I 4 , and is supplied to phase splitters 10, 11, 12, 13 supplying true and false signals to the pair of lines respectively coupled to the output of each splitter. The true and false signals are fed on column conductors to the control electrodes of selected transistors each having a further electrode connected to a row line and arranged so that each combination of bits in the inputs I 1 , I 2 or I 3 , I 4 leaves one row only in each address section not connected to an enabled transistor so that each X and Y binary address signal is converted to a 1 out of 4 signal. During readout a pulse # 2 enables transistors 31-34 and causes capacitors 36-39 to be charged. A pulse at # 3 enables transistors 21-24 and causes capacitors 26-29 to be charged. At the cessation of # 2 only one of capacitors 36-39 remains charged and at the cessation of # 3 only one of capacitors 26-29 remains charged unless the row to which the remaining charged capacitor is connected is coupled to the transistor enabled by the charged capacitor 36, 37, 38 or 39. Thus if the capacitor not discharged by the Y address is not coupled to an enabled transistor in the memory section 18 a "1" is read out at # 4 , otherwise a "0" is read out. In an alternative embodiment (Fig. 5, not shown) the Y address transistors are coupled between adjacent rows and a "1" voltage supply is coupled to the top row. The X address is arranged to enable one of the memory section transistors as described above, the memory address transistors being coupled between adjacent rows. The Y address enables the transistors to couple all pairs of adjacent rows but one. If the enabled memory transistor couples the pair of rows not coupled by the Y address the "1" voltage source charges an output capacitor connected to the lowest row and a "1" is read out, otherwise a "0" is read.
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