首页> 外国专利> MAGNETORESISTIVE SENSING DEVICE FOR DETECTION OF MAGNETIC FIELDS HAVING A SHAPE ANISOTROPY FIELD AND UNIAXIAL ANISOTROPY FIELD WHICH ARE PERPENDICULAR

MAGNETORESISTIVE SENSING DEVICE FOR DETECTION OF MAGNETIC FIELDS HAVING A SHAPE ANISOTROPY FIELD AND UNIAXIAL ANISOTROPY FIELD WHICH ARE PERPENDICULAR

机译:用于检测具有垂直各向异性的形状各向异性场和单轴各向异性场的磁场的磁阻传感装置

摘要

1369573 Magnetic storage devices INTERNATIONAL BUSINESS MACHINES CORP 28 Sept 1972 [26 Oct 1971] 44737/72 Heading H3B A sensor of small magnetic fields, such as bubble domains, comprises a magneto-resistive element whose dimensions are sufficiently small, e.g. 200 angstroms thick, 7À5 microns long and 5 microns wide, as to have both a uniaxial anisotropy field imparted during manufacture, and a shape anisotropy field determined by the relationship of its unequal length and width dimensions, the two anisotropy fields being mutually perpendicular and the larger of the two fields being substantially perpendicular to the magnetic field to be detected. As shown in Fig. 1A, a rectangular magnetoresistive element 18 is associated with an orthoferrite or garnet sheet 10 in which bubble domains are propagated by the combination of a permalloy T and I bar pattern and an in-plane rotating magnetic field H. A rectangular magnetoresistive sensor element 18 formed, e.g. of permalloy; and located on or adjacent to the sheet 10, is connected to a constant current source 20 by leads 19, changes of resistance due to magnetic field proximity being indicated to a utilization means 22 as a change of voltage Vs. The sensor element has an easy axis of magnetization E.A. transverse to its length, and has a shape anisotropy field greater than the uniaxial anisotropy field so that the magnetization vector M is normally directed along the length of the element. When a bubble domain 30, Fig. 1B, is moved into a position adjacent the sensor element 18, the external field H B of the domain coupled with the element causes rotation of its magnetization vector M and consequential change in the element resistance. It is stated that the use of both uniaxial and shape anisotropy enhances the detection sensitivity to small magnetic fields. In a modification. Figs. 2A and 2B, the sensor element is arranged so that it is parallel to an external domain field H B along its length dimension. As before the easy axis of magnetization E.A. extends across the width of the element, but in this case the shape anisotropy field is less than the uniaxial anisotropy field so that the normal position of the magnetization vector M is parallel to the easy direction of magnetization. This vector is rotated towards the length dimension of the element by an adjacent bubble domain 30 as shown in Fig. 2B. The sheet 10 is subjected to a bias field H z derived from a permanent magnet, an energized coil or an adjacent magnetic sheet. The sensor may be used to read out a pattern of domain reversals extending across a moving magnetic tape, Fig. 3A (not shown), in which case the sensor element is mounted with electrical connections on an insulating substrate. Such an element is formed by evaporation deposition on a magnetic sheet or insulating substrate in the presence of a magnetic field with the subsequent selective formation of electrical connections by masking, electroplating and etching.
机译:1369573磁存储设备国际商用机器公司1972年9月28日[1971年10月26日] 44737/72标题H3B诸如气泡域之类的小磁场传感器包括一个磁阻元件,其尺寸要足够小,例如,磁阻。厚度为200埃,长7‑5微米,宽5微米,以便在制造过程中既具有单轴各向异性场,又具有由其长度和宽度尺寸不相等的关系确定的形状各向异性场,两个各向异性场相互垂直,并且两个场中的较大的一个基本上垂直于要检测的磁场。如图1A所示,矩形磁阻元件18与正铁氧体或石榴石片10相关联,在该铁氧体或石榴石片10中,磁畴通过坡莫合金T和I条形图案以及平面内旋转磁场H的组合而传播。例如形成的磁阻传感器元件18坡莫合金并位于薄片10上或附近的导线10通过导线19连接到恒流源20,由于磁场接近引起的电阻变化作为电压Vs的变化指示给利用装置22。传感器元件的易磁化轴为E.A.垂直于其长度,并且具有大于单轴各向异性场的形状各向异性场,因此磁化矢量M通常沿元​​素的长度方向。当图1B中的气泡畴30移动到与传感器元件18相邻的位置时,与该元件耦合的畴的外场H B引起其磁化矢量M的旋转以及元件电阻的相应变化。据指出,同时使用单轴各向异性和形状各向异性都增强了对小磁场的检测灵敏度。在修改中。无花果如图2A和2B所示,传感器元件被布置成使其沿着其长度方向平行于外部域场H B。与以前一样,易磁化轴E.A.磁化矢量在元件的整个宽度上延伸,但是在这种情况下,形状各向异性场小于单轴各向异性场,使得磁化矢量M的法线位置平行于易磁化方向。如图2B所示,该矢量通过相邻的气泡域30朝着元件的长度尺寸旋转。片材10受到来自永磁体,通电线圈或相邻的磁性片材的偏置场H z。传感器可以用于读出横跨移动的磁带延伸的畴反转图案,图3A(未示出),在这种情况下,传感器元件通过电连接安装在绝缘基板上。通过在存在磁场的情况下在磁性片或绝缘基板上蒸发沉积并随后通过掩模,电镀和蚀刻选择性形成电连接来形成这种元件。

著录项

  • 公开/公告号JPS5037490B2

    专利类型

  • 公开/公告日1975-12-03

    原文格式PDF

  • 申请/专利权人

    申请/专利号JP19720096311

  • 发明设计人

    申请日1972-09-27

  • 分类号G11C11/14;G11C19/00;G11B5/02;

  • 国家 JP

  • 入库时间 2022-08-23 03:02:05

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