SOLUTION FOR THE ALTERNATION OF HIGH SPENSION AND HIGH STRENGTH

摘要

A Schottky barrier solar cell is disclosed, consisting of a layer of wide band gap semiconductor material such as AlGaAs on which a very thin film of semi-transparent metal is deposited to form a Schottky barrier. The layer of the wide band gap semiconductor material is on top of a layer of narrower band gap semiconductor material, to which one of the cell's contacts may be attached directly or through a substrate. The cell's other contact is a grid structure which is deposited on the thin metal film.