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Keishaketsukanmitsudohikaryoryoseisoojusuru denkachikusekidaioodo

机译:ish下Ke光三光光濑良濑烧酒传千筑久大

摘要

In a light actuated device such as an alternating current driven light valve or other display device requiring the photocapacitance of a light responsive layer in a photodiode to be modulated in response to changes in incident or writing light, sensitivity is an important factor, especially when a cathode ray tube phosphor image is the source of such light. This sensitivity can be improved by more than an order of magnitude by using a graded defect center (as defined hereinbelow) concentration, graded band gap layer in said diode which can produce a graded optical absorption coefficient between two regions of the layer so that most of the incident light is absorbed in the region near the semiconductor rectifying junction of the diode to store charge near this junction by this or any similar action. In one particular embodiment disclosed a cadmium sulfide photoconductor is used and the defect center density and hence the optical absorption coefficient for the incident light beam in the light sensitive region is graded from a low value on the light input side to a higher value near the junction forming interface with a cadmium telluride light blocking layer by varying the defect concentration in the cadmium sulfide during the film preparation by progressively lowering the temperature during sputter deposition. In a second embodiment this grading is accomplished by alloying cadmium sulfide with cadmium selenide near the cadmium telluride region thus introducing defect centers and lowering the absorption band edge. In both embodiments charge carriers are generated which are stored in the region adjacent to the junction interface and thereby change the photocapacitive depletion width adjacent to the junction to enhance the sensitivity of the diode.
机译:在诸如交流驱动的光阀之类的光致动设备或其他需要根据入射光或写入光的变化来调制光电二极管中光响应层的光电容的显示设备中,灵敏度是重要的因素,尤其是当阴极射线管的荧光粉图像就是这种光的来源。通过在所述二极管中使用分级的缺陷中心(如下文所定义)的浓度,分级的带隙层,可以在层的两个区域之间产生分级的光吸收系数,从而将灵敏度提高一个数量级以上。入射光在二极管的半导体整流结附近的区域被吸收,从而通过这种或任何类似的动作在该结附近存储电荷。在公开的一个特定实施例中,使用了硫化镉光电导体,并且缺陷中心密度以及因此光敏区域中的入射光束的光吸收系数从光输入侧的低值渐变到结附近的较高值。通过在膜制备过程中通过逐渐降低溅射沉积过程中的温度来改变硫化镉中的缺陷浓度,从而与碲化镉光阻挡层形成界面。在第二实施例中,通过在碲化镉区域附近使硫化镉与硒化镉合金化从而引入缺陷中心并降低吸收带边缘来实现该分级。在两个实施例中,都产生电荷载流子,该电荷载流子被存储在与结界面相邻的区域中,从而改变与结相邻的光电容耗尽宽度,以增强二极管的灵敏度。

著录项

  • 公开/公告号JPS5234911B2

    专利类型

  • 公开/公告日1977-09-06

    原文格式PDF

  • 申请/专利权人

    申请/专利号JP19750137846

  • 发明设计人

    申请日1975-11-18

  • 分类号G09F13/20;G02F1/135;H01L29/92;H01L31/10;H01L31/109;H01L31/14;

  • 国家 JP

  • 入库时间 2022-08-23 01:06:57

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