improvements in devices for semi conductor with layer of barrier schottky

摘要

1446406 Semi-conductor devices CUTLERHAMMER Inc 9 Oct 1974 [9 Oct 1973] 43784/74 Heading H1K A semi-conductor device, such as a varactor diode, has a Schottky barrier 1 formed by a tantalum electrode 2 in contact with the device body, and an insulating film 7, 8 which includes a region 8 of Ta 2 O 5 around the electrode 2. The region 8 of Ta 2 O 5 is formed by oxidation of the electrode periphery and the main insulating film 7 is similarly formed from the semi-conductor body, which is of GaAs. The Schottky contact 2 is covered with a layer 6 of Au for connection to a Au ribbon by thermal compression bonding. An ohmic contact 5 of Ag, Sn or Pa is also applied to the device. The mesa structure is produced by etching a slice having a plurality of the electrodes 2, 6, the slice being later subdivided.