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Stripline IGFET amplifier using charge carrier pulse - amplifies electromagnetic wave with steep leading edge

机译:带电荷载波脉冲的带状线IGFET放大器-陡峭的前沿放大电磁波

摘要

The stripline IGFET amplifier consists of an IGFET amplifier component and a stripline waveguide leading at an angle from source to drain such that the charge carrier wave travels with the velocity approximating the phase velocity of the electromagnetic wave at the place where the e.m. wave's leading edge appears. The charge carrier current pulse on the stripline amplifies the e.m. wave. This addition attempts to make this e.m. wave's (17) leading edge (20) as steep as possible. This it achieves by synchronising the charge wave (9) travelling from source (6) to drain (7) with the e.m. wave such that the front (15) of the charge wave coincides with the start (19) of the flat part (18) of the pulse of the e.m. wave.
机译:带状线IGFET放大器由IGFET放大器组件和从源极到漏极成一定角度延伸的带状线波导组成,以使电荷载波以近似于电磁波相速度的速度行进。出现波的前沿。带状线上的电荷载流子电流脉冲会放大e.m.波。此添加尝试使此e.m.波浪(17)的前缘(20)越陡峭。这是通过使从源(6)到漏极(7)传播的电荷波(9)与e.m同步来实现的。使电荷波的前部(15)与e.m脉冲的平坦部分(18)的起点(19)一致。波。

著录项

  • 公开/公告号DE2532219A1

    专利类型

  • 公开/公告日1977-02-03

    原文格式PDF

  • 申请/专利权人 SIEMENS AG;

    申请/专利号DE19752532219

  • 发明设计人 DOSSEJOACHIMPROF.DR.-ING.HABIL.;

    申请日1975-07-18

  • 分类号H03F3/16;H03F3/55;H01L29/78;H03F3/193;

  • 国家 DE

  • 入库时间 2022-08-23 00:05:27

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