A method for the production of mesa - and relevant spatial semiconductor structures with a local inhomogeneity in respect of their composition and apparatus for carrying out this method

摘要

Prodn. of structures with local inhomogeneities in their compsn. involves transport and deposition of a material by chemical gas transport reactions with parallel adjacent base plate (I) and auxiliary plate (II), one of which has a locally inhomogeneous surface. A temp. drop is developed between the 2 plates, to ensure transport in a given direction from one of the plates. The reactor is filled with a reaction or carrier gas. the plates are brought close together and shifted so that given points on (I) are covered by given points on (II) at least once, to give gas streams of given direction, compsn. and cross-section, at a distance between the surfaces of the 2 plates less than the min. of a point with homogeneous compsn. on the surface of (II). Used in semiconductor and radio electronics and integrated optic-electronics. The profile of the structures is regulated by repeated consecutive growth and etching stages in a single operation. The points on (II) are over 2 mum deep and consist of Ge, si, AIIIBV and AIIBVI cpds. or solid solns. of these cpds. surrounded by SiO2, quartz, Al2O3 or sapphire.