首页> 外国专利> Method and measuring apparatus for the determination of the portion of one or more gas components in a gas mixture, in particular of the co - content and / or of the ch deep 4 - content in the underground mining

Method and measuring apparatus for the determination of the portion of one or more gas components in a gas mixture, in particular of the co - content and / or of the ch deep 4 - content in the underground mining

机译:用于确定混合气体中一种或多种气体成分的部分,尤其是地下采矿中共含量和/或ch深4含量的测定的方法和测量设备

摘要

A method of determining the proportion of =1 gas constituents in a gas mixture, esp. the CO constituents, utilises metallic oxide semiconductors which change their electrical resistance in the presence of reducing gases. The temperature of the metallic oxide semiconductor is periodically changed between two boundaries values, esp. an upper value 400 degrees and a lower value -20 degrees C, and esp. at approximately room temp. This arrangement enables the high selective sensitivity to the presence of CO in the low temp. ranges to be utilised for detecting CO at the expense of other reducing gases, while the sensitivity in the higher ranges to CH4 and other hydrocarbons enables this end of the temp. range to be utilised for selectively detecting the presence of these constituents. The use of a periodically fluctuating temp. regenerates the semiconductor so that gases which have diffused into its surface do not modify its long term sensitivity.
机译:一种确定气体混合物中> = 1的气体成分的比例的方法,尤其是。 CO成分使用金属氧化物半导体,该金属氧化物半导体会在存在还原性气体的情况下改变其电阻。金属氧化物半导体的温度在两个边界值之间特别是周期性地变化。上限值为400摄氏度,下限值为-20摄氏度,尤其是。在大约室温下这种布置使得在低温下对CO的存在具有高选择性敏感性。在较宽的范围内对CH4和其他碳氢化合物的敏感度使温度的这一目标得以实现。范围用于选择性地检测这些成分的存在。使用周期性波动的温度。再生半导体,使扩散到其表面的气体不会改变其长期灵敏度。

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