首页> 外国专利> Highly pure monocrystalline sapphire prodn. - by the Czochralski process using a molybdenum crucible in reducing atmos.

Highly pure monocrystalline sapphire prodn. - by the Czochralski process using a molybdenum crucible in reducing atmos.

机译:高纯度单晶蓝宝石产品。 -通过使用钼坩埚的Czochralski工艺来减少气氛。

摘要

Monocrystalline oxide substances of the highest purity, and with a high m.pt., are made by the Czochralski process, using molybdenum crucibles and drawing the crystal in a reducing atmos. The atmos. is pref. at 0.1-1 torr and contains carbon; the Mo crucible is pref. heated indirectly via an induction-heated graphite susceptor and the process is pref. used for the prodn. of sapphire monocrystals. Method avoids use of iridium crucibles which are extremely expensive and can form an oxide which contaminates the sapphire.
机译:通过切克劳斯基工艺,使用钼坩埚并在还原性气氛中吸引晶体,可以制得纯度最高,熔点最高的单晶氧化物。大气。是首选。在0.1-1 torr时含有碳;钼坩埚是首选。通过感应加热的石墨基座间接加热,过程很简单。用于产品蓝宝石单晶。该方法避免了使用铱坩埚,铱坩埚非常昂贵并且会形成污染蓝宝石的氧化物。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号