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Thin-film circuit with low temp. coefficient - has temp. coefficient of its capacitive elements reduced by tempering before applying capacitor second plates

机译:低温薄膜电路系数-具有温度在应用电容器第二极板之前通过回火降低其电容元件的系数

摘要

The thin-film circuit is used. It consists of temperature compensated RC elements made of an AlTa alloy with 3-17% tantalum and deposited on an insulating substrate, as in 2546675. To reduce the temperature coefficient of the capacitive elements the AlTa alloy layer that has already been oxidised in the regions where the capacitors are wanted is tempered before the second capacitor plates are formed. Tempering lasts for 0.5 hours at 400 deg.C.
机译:使用薄膜电路。如2546675所示,它由温度补偿的RC元件组成,该温度补偿的RC元件由钽含量为3-17%的AlTa合金制成,并沉积在绝缘基板上。如要降低电容性元件的温度系数,该区域中已经被氧化的AlTa合金层在形成第二电容器极板之前,对需要电容器的地方进行回火。在400℃下回火持续0.5小时。

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