首页> 外国专利> Semiconductor data store with MOS switching transistors - has matrix of storage cells in rows and columns and read amplifier arranged in centre of each column

Semiconductor data store with MOS switching transistors - has matrix of storage cells in rows and columns and read amplifier arranged in centre of each column

机译:带有MOS开关晶体管的半导体数据存储-在行和列中具有存储单元矩阵,并在每列的中心排列有读取放大器

摘要

Semiconductor storage arrangement has matrix of storage cells in rows and columns and read amplifier with two driver transistors. The read amplifier is arranged in the centre of each column. The two driver transistors are transversely coupled. Several switch components are connected to the terminals of the driver transistors, which are opposite to the terminals connected to the column. The switch components are connected in such a way that in the activated stage they apply the driver transistors to a reference potential. At a given point in time only two 1K blocks are selected by means of a decoder (28).
机译:半导体存储装置具有成行和成列的存储单元矩阵以及具有两个驱动晶体管的读取放大器。读放大器布置在每列的中央。两个驱动器晶体管横向耦合。多个开关组件连接到驱动晶体管的端子,该端子与连接到列的端子相反。开关组件的连接方式应使它们在激活阶段将驱动器晶体管施加到参考电位。在给定的时间点,借助于解码器(28)仅选择两个1K块。

著录项

  • 公开/公告号DE2719726A1

    专利类型

  • 公开/公告日1977-11-24

    原文格式PDF

  • 申请/专利权人 TEXAS INSTRUMENTS INC.;

    申请/专利号DE19772719726

  • 发明设计人 KITAGAWANORIHISA;

    申请日1977-05-03

  • 分类号G11C7/06;

  • 国家 DE

  • 入库时间 2022-08-22 21:57:17

相似文献

  • 专利
  • 外文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号