Mesa semiconductor element with high blocking voltage - has limited impurity gradient near pn-junction and specified depth of mesa groove

摘要

The semiconductor substrate of the mesa component has two main surface (12, 11) which are connected by an end surface (13). In one surface (12) is formed a mesa groove (14) as a closed ring extending towards the second main surface. The groove surrounds a semiconductor region of the one conductivity which forms a pn-junction (Jc) with a region of second conductivity. The gradient of impurity concentration near the pn-junction does not exceed 3.5 x 10I7 atoms /cm4. The mesa groove depth equals at least the some of the pna-junction depth and 10% of the width of a depletion layer, formed by application of an avalanche voltage at the pnj-junction. The groove width is at least three times its depth.