Brief description of embodiments of the device a semi - driver has heterojunction

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• 2. 具有半绝缘性氧化锌半导体薄膜与硅的异质结的光敏二极管 [P] . 中国专利： CN100517770C . 2009.07.22
• 3. Brief description of embodiments of the device a semi - driver has heterojunction [P] . 法国专利： FR2296264A1 . 1976-07-23

  机译： 半驱动器具有异质结的装置的实施例的简要说明

• 4. Brief description of embodiments of a semiconductor device of the bipolar transistor type has heterojunction [P] . 法国专利： FR2625612B1 . 1990-05-04

  机译： 具有异质结的双极晶体管类型的半导体器件的实施例的简要描述

• 5. Brief description of embodiments, the first embodiment, a semi - driver has a multilayer structure and the application of this [P] . 法国专利： FR2435816B1 . 1982-04-16

  机译： 实施方式的简要说明，第一实施方式，具有多层结构的半驱动器及其应用

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