Combination glass/low temperature deposited Si.sub.w N.sub.x H. sub.y O. sub.z passivating overcoat with improved crack and corrosion resistance for a semiconductor device

摘要

A semiconductor device having an improved passivating structure comprises a first primary passivating layer free of any layer of silicon nitride (Si.sub.3 N.sub.4), disposed on a surface of a semiconductor body, a metallic conductor disposed on the first passivating layer, and a secondary passivating overcoat disposed over the metallic conductor, wherein the secondary passivating overcoat includes both a glass layer on the conductor and a low-temperature-deposited (typically 300 C) nitride layer on the glass layer. The device is highly resistant to degradation in the presence of water vapor and corrosive atmospheres.