PRODUCTION OF PLAIN BOILED CAN OF SHELLFISHES WITH SHELL

摘要

PURPOSE:To establish desired spectral sensitivity characteristics by simultaneously controlling the junction depth of p-n, width of depletion layer and the length of substrate side minority carrier diffusion, through the suitable selection of the substtate concentration, in a p-n junction type photo diode. CONSTITUTION:Various gas phase epitaxial growing GaAs0.62P0.38 substrates having the electron concentration of 6X1015cm-3 to 3X1018cm-3 are prepared, and after sequentially depositing Al2O3 of 1000Angstrom and siO2 of 2000Angstrom on the substrates with CVD method, the ion injection window is formed and Zn ions of 50 KeV are injected with 1X1014 cm-3. After that, by performing anneal of 650 deg.C, 30 minutes under phosphorus atomosphere the photo diode of 1.05mm2 of photo detecting area can be obtained. The junction capacitance at zero bias, the width of depletion layer calculated by this and the depth of p-n junction for the diode thus obtained can be shown as Table 1.