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Kododenseisatsuzokantaagetsuto

机译:小草小草

摘要

In a method of manufacturing a target structure for use in a photoconductive image pickup tube when depositing a P-type photoconductive film on an N-type transparent conductive film deposited on one side of a transparent substrate which acts as an incident window of the image pickup tube, the P-type photoconductive film is made up of first and second photoconductive substances. The commencement of the deposition of the first photoconductive substance is delayed a predetermined time than that of the second photoconductive substance and the deposition of the first photoconductive substance is terminated before completion of the deposition of the second photoconductive material thereby forming a layer of the first photoconductive substance not contiguous to the junction between the N-type transparent conductive film and the P-type photoconductive film and having a predetermined thickness.
机译:在制造用于光电导图像拾取管中的靶结构的方法中,当在沉积在用作图像拾取器的入射窗口的透明基板的一侧上沉积的N型透明导电膜上沉积P型光电导膜时管中,P型光电导膜由第一和第二光电导物质组成。第一光电导物质的沉积开始比第二光电导物质的沉积开始延迟预定时间,并且在完成第二光电导物质的沉积之前终止第一光电导物质的沉积,从而形成第一光电导层N型透明导电膜与P型光电导膜的接合处不相邻且具有预定厚度的物质。

著录项

  • 公开/公告号JPS5419128B2

    专利类型

  • 公开/公告日1979-07-12

    原文格式PDF

  • 申请/专利权人

    申请/专利号JP19740070214

  • 发明设计人

    申请日1974-06-21

  • 分类号H01J29/45;H01L31/08;

  • 国家 JP

  • 入库时间 2022-08-22 21:12:32

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