首页> 外国专利> Switching semiconductor with two opposite conductivity layers - has two more layers of alternating conductivity forming three pn-junctions, and two main electrodes

Switching semiconductor with two opposite conductivity layers - has two more layers of alternating conductivity forming three pn-junctions, and two main electrodes

机译:具有两个相对导电层的开关半导体-具有两层交替形成三个pn结的交替导电层和两个主电极

摘要

The pnpn four-layer switching semiconductor, such as switching-off thyristor has three layers of alternate conductivity on one substrate surface. Thus the first and second layer formaa first pn-junction, the second and third layer a second pn-junction, and the third layer forms a third pn-junction with a fourth layer on the other main surface of the substrate. The first semiconductor layer carries a main electrode in ohmic contact, while the fourth layer carries a second similar main electrode. A control electrode is in ohmic contact of a free surface of the second semiconductor layer which is thicker than the third layer. Preferably the second semiconductor layer is composed of two partial layers, one with low and one with a high specific resistance.
机译:pnpn四层开关半导体(例如关断晶闸管)在一个基板表面上具有三层交替的导电性。因此,第一层和第二层形成第一pn结,第二层和第三层形成第二pn结,并且第三层在基板的另一主表面上与第四层形成第三pn结。第一半导体层带有欧姆接触的主电极,而第四层带有类似的第二主电极。控制电极与第二半导体层的比第三层厚的自由表面欧姆接触。优选地,第二半导体层由两部分层组成,一层具有低电阻率,另一层具有高的电阻率。

著录项

  • 公开/公告号DE2733060A1

    专利类型

  • 公开/公告日1979-02-01

    原文格式PDF

  • 申请/专利权人 MITSUBISHI DENKI K.K.;

    申请/专利号DE19772733060

  • 发明设计人 AKAMATSUMASAHIKO;

    申请日1977-07-21

  • 分类号H01L29/74;

  • 国家 DE

  • 入库时间 2022-08-22 19:49:45

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