Adjustment of minority charge carrier life - uses platinum for recombination centres, and has another element which is diffused, whose atom dia. is greater than that of silicon

摘要

The charge carriers are in semiconductors consisting of monocrystalline silicon, and control of their life is achieved by diffusion of platinum as recombination centres in an SC chip with different conduction type zone structure produced by diffusion. Their doping material concentration is different but high. When a zone structure of the n-type with a high dope concentration on the surface is produced, an additional element is diffused into the semiconductor body before platinum diffusion. This element atom dia. is greater than that of a silicon atom. The temp. range for the diffusion of the platinum is form 500 deg.C to 950 deg.C.