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Contactless measurement of local life of silicon chip - using oscillating circuit which is capacitively coupled with chip, and measuring surface conductivity and damping factor

机译:非接触式测量硅芯片的局部寿命-使用与芯片电容耦合的振荡电路,并测量表面电导率和阻尼系数

摘要

The oscillating circuit is connected to an h. f generator supplying it. The chip area to be measured is capacitively coupled to the oscillating circuit, which it damps in accordance with its conductivity. The chip is illuminated by flashlights, and a voltmeter is connected to the oscillating circuit, whose resonance voltage is a measure for the crystal surface conductivity. Its variation in time is a measure of the chip area life. The oscillating circuit consists of a toroidal coil whose core is made of an UHF ferrite, on which a conducting metal strip is wound. Its one end is connected to a pin at a short distance from the chip, and the other to a chip supporting plate.
机译:振荡电路连接到h。 f发电机为其供电。待测芯片面积与振荡电路电容耦合,并根据其电导率对其进行阻尼。芯片被手电筒照亮,电压表连接到振荡电路,其谐振电压是晶体表面电导率的量度。其时间变化是芯片面积寿命的度量。振荡电路由环形线圈组成,其芯由UHF铁氧体制成,其上缠绕有导电金属带。它的一端连接到与芯片相距很近的引脚,另一端连接到芯片支撑板。

著录项

  • 公开/公告号DE2756879A1

    专利类型

  • 公开/公告日1979-06-21

    原文格式PDF

  • 申请/专利权人 SIEMENS AG;

    申请/专利号DE19772756879

  • 发明设计人 KELLERWOLFGANGDR.RER.NAT.;

    申请日1977-12-20

  • 分类号G01R31/26;

  • 国家 DE

  • 入库时间 2022-08-22 19:47:32

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