Micro-machining substrates by ion erosion - where magnetron creates electron cyclotron resonance in neutral argon ion plasma

摘要

The appts. includes a vacuum chamber(a) in which the substrate is located below a source(b) providing a neutral plasma beam bombarding the substrate; and a voltage source(c) can provide an electric sepg. field (c1) in the vicinity of the substrate. Source(c) is pref. located between chamber(a) and either the substrate carrier(d) or a grid(e) near the substrate. Source(c) pref. includes a polarity reversing switch; whereas source(b) pref. includes an ionising chamber(b) fed with gas and a UHF magnetron; an electromagnet located round chamber(d) creates a d.c. field parallel to the axis of the magnetron so cyclotron-electron-resonance is obtd. The classic ion source can be replaced by a source(b) providing a neutral plasma with sepn. of the ions in the plasma only in the direct vicinity of the substrate; and only low energy is required.