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Target structure for electronic storage tubes of the coplanar grid type having a grid structure of at least one pedestal mounted layer

机译:具有至少一个基座安装层的栅格结构的共面栅格类型的电子存储管的靶结构

摘要

A target structure for electronic storage tubes which is of the "coplanar grid" type. The target comprises a conducting layer which in a preferred configuration has slender elongated pedestals supporting elongated spaced parallel insulating strips which serve as the coplanar grid. The spaces between adjacent edges of insulating strips expose regions of the conducting layer to enable an electron beam to contact the exposed regions of the conducting layer. The pedestals support the insulating strips a spaced distance above the exposed regions of the conducting layer to form "vacuum gaps" which serve to inhibit electrical charge on the surfaces of the insulating strips from transferring to the interface between each strip and the vacuum gap. The pedestals may be an integral part of the conducting layer or may be formed from an insulating material. Methods for producing the novel target are described.
机译:电子存储管的目标结构是“共面网格”类型的。靶包括导电层,该导电层在优选的配置中具有细长的细长基座,该细长基座支撑用作共面栅格的细长间隔开的平行绝缘带。绝缘条的相邻边缘之间的空间暴露了导电层的区域,以使电子束能够接触导电层的暴露的区域。基座将绝缘带支撑在导电层的暴露区域上方一定距离,以形成“真空间隙”,该真空间隙用于抑制绝缘带表面上的电荷转移到每个带和真空间隙之间的界面。基座可以是导电层的组成部分,或者可以由绝缘材料形成。描述了产生新型靶的方法。

著录项

  • 公开/公告号JPS5530655B2

    专利类型

  • 公开/公告日1980-08-12

    原文格式PDF

  • 申请/专利权人

    申请/专利号JP19740046767

  • 发明设计人

    申请日1974-04-26

  • 分类号H01J29/39;H01J31/60;

  • 国家 JP

  • 入库时间 2022-08-22 18:51:57

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