Electronic store with two FETs - has one storage FET with additional gate controlled by control potential

摘要

The FET's main paths are connected in series. The first storage FET has an insulated floating gate, and cam be programmed, and the second, reading FET is controlled at its gate by a control voltage. The substrate of both FET's is separated by an insulation. The storage FET (T1) can be programmed by channel ignition, and has an additional control gate (G2') controlled by a control potential capacitively acting on the floating storage gate (G1). The active regions of both FET's consist of alternative zones of (n, p, n) material covered by the insulating layers.