Planar semiconductor diode with diffusion zone metallised contact - has second silicon oxide layer with window with metal coating including aluminium and nickel films

摘要

The planar semiconductor diode is designed as a zener diode. It consists of a semiconductor substrate of one type of conductivity with a diffusion zone of the opposite type. The diffusion zone is contacted by metallisation. The lower side of the disc (1) has a second silicon oxide layer (3) with a second window (5). This window is coated with a layer of metal. The metallisation (8, 9, 10) extends over the window on the top surface and the bottom surface. A lead layer (11) is deposited on the metallised sections. The metallisation may include aluminium and nickel films.