首页> 外国专利> Wideband FET voltage amplifier circuit - has voltage offset unit and additional transistor as load resistance connected to output of amplifier

Wideband FET voltage amplifier circuit - has voltage offset unit and additional transistor as load resistance connected to output of amplifier

机译:宽带FET电压放大器电路-具有电压偏移单元和附加晶体管作为负载电阻,连接到放大器的输出

摘要

The wide-band, f.e.t. voltage amplifier has a load resistance connected behind or after the amplifier transistor. The load resistance allows the drain current tolerance to have no effect on the d.c. working point of the stages connected to the amplifier's output. A current source(T2) with high source resistance pref. a voltage offset unit, and an additional transistor(T3) as the load resistance, are connected to the output of the amplifier transistor(T1). The voltage offset is designed as series-connected diodes(D1-D4) and a transistor(T4) connected after or behind the diodes. The centre tap between the diodes(D1-D4) and the transistor(T4) is connected to the gate of the extra transistor(T3).
机译:宽带,英尺电压放大器的负载电阻连接在放大器晶体管的后面或后面。负载电阻使漏极电流容限对dc无影响。连接到放大器输出的各级的工作点。具有较高源电阻的电流源(T2)。电压偏置单元和作为负载电阻的附加晶体管(T3)连接到放大晶体管(T1)的输出。电压偏移设计为串联连接的二极管(D1-D4),以及在二极管之后或之后连接的晶体管(T4)。二极管(D1-D4)和晶体管(T4)之间的中心抽头连接到额外晶体管(T3)的栅极。

著录项

  • 公开/公告号DE2846687A1

    专利类型

  • 公开/公告日1980-04-30

    原文格式PDF

  • 申请/专利权人 SIEMENS AG;

    申请/专利号DE19782846687

  • 发明设计人 KRAUSEGERHARD;

    申请日1978-10-26

  • 分类号H03F3/16;H03F1/48;

  • 国家 DE

  • 入库时间 2022-08-22 17:34:49

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号