Electroplating of metal onto large photoelectric device - esp. onto silicon solar cell, where lamp generates voltage for electroplating one side of substrate

摘要

Device has a pn-junction and one surface (a) is of one conductivity type, and at least part of a second surface has opposite conductivity (b). An electric contact is formed on surface (a), and the device is immersed in an electroplating bath contg. an anode. A voltage is applied to the anode and to surface (a) for electroplating the latter surface (a); and a lamp directs radiant energy onto surface (b). In the pref. process, the device is a silicon solar cell with a surface (a) coated with an antireflection layer (ARL) contg. holes via which a pattern of metal silicide is formed on the Si substrate, esp. the silicide of Pd or Pt; and the silicide is plated with Ag; Cu; or a mixt. of Sn and Ni. Lamp creates a voltage on surface (b) so both surfaces (a,b) can be plated with desired thicknesses.