首页> 外国专利> halfgeleiderinrichting containing at least a halfgeleidersubstraatlichaam halfge - leiderlaag presented with at least one isolation zone,what a halfgeleiderlaag embedded in the local heating by thermal oxidation of the half of the geleidermateriaal halfgeleiderlaag formed insulating material and a workmethod for the manufacture thereof.

halfgeleiderinrichting containing at least a halfgeleidersubstraatlichaam halfge - leiderlaag presented with at least one isolation zone,what a halfgeleiderlaag embedded in the local heating by thermal oxidation of the half of the geleidermateriaal halfgeleiderlaag formed insulating material and a workmethod for the manufacture thereof.

机译：至少含有一个半geleidersubstraatlichaam halfge-leiderlaag富集至少有一个隔离区，半geleiderlaag嵌入局部加热通过加热氧化的一半的gelderdermateriaal halfgeleiderlaag形成绝缘材料和一种工作方法。

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公开/公告号FR2138904B1

专利类型
公开/公告日1980-04-04

原文格式PDF
申请/专利权人 PHILIPS GLOEILAMPENFABRIEKEN NV;
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申请/专利号FR19720018312
发明设计人
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申请日1972-05-23
分类号H01L19/00;
国家 FR
入库时间 2022-08-22 17:27:01

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