System and method of the beam is a continuation of growth epitaxial with the introduction of 1996

摘要

P system and method of epitaxial growth by molecular beam with the introduction of hydrogen. / p & & p & the system comprises a chamber to ultra - vacuum 10, a semi - conductor 20 on which it is desired to be grown an epitaxial layer, a layer 12 of the material that is desired to deposit. This system is characterized in that it further comprises a hydrogen source 14, the flow rate and the ionization are provided by the device 18. It has been found that the presence of hydrogen makes it possible to eliminate the problems posed by the presence of oxygen in the chamber and thus to improve the mobility of the carriers. / p & & p & application to the manufacture of devices to be served - conductors. / p