LATERAL PNP TRANSISTOR STRUCTURE FOR HIGH VOLTAGE V (BR) CEO, PROTECTED AGAINST INVERSION OF POWER POLARITIES AND RESULTING PRODUCT

摘要

P THIS LATERAL PNP TRANSISTOR MAY BE SUBJECT WITHOUT DAMAGE TO POLARITY INVERSION IN ELECTRONIC CIRCUITS. IN THE EXTERNAL PLAN OF THE SEMICONDUCTOR HAVING BEARED EPITAXIAL GROWTH AND DOPING N WHICH FORM THE BASE OF THE LATERAL PNP, THE INTERSECTION LINES ARE DISTINGUISHED WITH: THE DIFFUSED COLLECTOR AREA, DELIMITED BY CONTOUR 13 AND BY CONTOUR 19 , THE TRANSMITTER ZONE DELIMITED BY CONTOUR 12, THE BASIC CONTACT AREA 16 DELIMITED BY CONTOUR 18 AND, IN ORTHOGONAL PROJECTION, THE INTERSECTION LINES, BETWEEN THEM AND WITH THE PLAN, DIFFERENT ELEMENTS.