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Lattice constant grading in the Al.sub.y Ga.sub.1-y As.sub.1-x Sb. sub.x alloy system
Lattice constant grading in the Al.sub.y Ga.sub.1-y As.sub.1-x Sb. sub.x alloy system
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机译:Al y Ga 1-y As 1-x Sb中的晶格常数分级。亚合金系统
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摘要
Liquid phase epitaxy is employed to grow a lattice matched layer of GaAsSb on GaAs substrates through the compositional intermediary of the III-V alloy system AlGaAsSb which acts as a grading layer. The Al constituent reaches a peak atomic concentration of about 6% within the first 2.5 m of the transition layer, then decreases smoothly to about 1% to obtain a lattice constant of 5.74 A. In the same interval the equilibrium concentration of Sb smoothly increases from 0 to about 9 atomic percent to form a surface on which a GaAsSb layer having the desired energy bandgap of 1.1 ev for one junction of an optimized dual junction photolvoltaic device. The liquid phase epitaxy is accomplished with a step cooling procedure whereby dislocation defects are more uniformly distributed over the surface of growing layer.
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